HN3C51F

更新时间： 2024-11-06 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
4页	295K
描述
Audio Frequency General Purpose Amplifier Applications

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中文翻译

获取价格

数据手册

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HN3C51F 数据手册

HN3C51F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN3C51F

Audio Frequency General Purpose Amplifier Applications

Unit: mm

High voltage : V_CEO= 120V

High h_FE: h_FE= 200~700

Excellent h_FElinearity

: h_FE(I_C= 0.1mA) / h_FE(I_C= 2mA) = 0.95 (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

120

CBO

CEO

EBO

100

°C

Base current

1.COLLECTOR1 (C1)

2.EMITTER1 (E1)

3.COLLECTOR2 (C2)

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

150

4.EMITTER2

5.BASE2

6.BASE1

(E2)

(B2)

(B1)

−55~150

stg

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

―

JEITA

TOSHIBA

2-3N1B

Weight: 0.015g (Typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating. Power dissipation per element should not exceed 200mW.

Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)

Test

Circuit

Characteristic

Symbol

Test Condition

= 120V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

DC current gain

―

0.1

700

μA

CBO

―

= 5V, I = 0

EBO

= 6V, I = 2mA

200

Collector-emitter saturation voltage

Transition frequency

―

= 10mA, I = 1mA

―

0.3

―

= 6V, I = 1mA

100

3.0

MHz

Collector output capacitance

= 10V, I = 0, f = 1MHz

―

= 6 V, I = 0.1 mA

Noise figure

―

1.0

―

f = 1 kHz, R = 10 kΩ

Note:h_FEClassification GR(G): 200~400, BL (L): 350~700

(

) Marking Symbol.

Marking

Equivalent Circuit (Top View)

Type Name

Rank

2007-11-22

12 3 4

中文翻译

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HN3C51FGR	TOSHIBA	获取价格	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1B, 6 PIN,
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