Datasheet > HN3G01J-BL(TE85L)

HN3G01J-BL(TE85L)

更新时间： 2024-11-06 21:04:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	358K
描述
Small Signal Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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HN3G01J-BL(TE85L) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

HN3G01J-BL(TE85L) 数据手册

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HN3G01J

TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN

EPITAXIAL TYPE TRANSISTOR

HN3G01J

High Frequency Amplifier Applications

AM High Frequency Amplifier Applications

Audio Frequency Amplifier Applications

Unit in mm

Absolute Maximum Ratings (Ta = 25°C)

Q1: FET

CHARACTERISTIC

Gate-Drain Voltage

SYMBOL

RATING

UNIT

−20

GDS

Gate Current

Q2: TRANSISTOR

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

JEDEC

JEITA

—

150

Base Current

TOSHIBA

2−3L1B

Weight: 0.014 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Common Ratings

CHARACTERISTIC

SYMBOL

RATING

UNIT

Power Dissipation

200

125

°C

Junction Temperature

Storage Temperature Range

stg

–55~125

°C

Total Rating

2007-11-01

12 3 4 5

中文翻译

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