生命周期: | Obsolete | 包装说明: | US6, 2-2J1A, 6 PIN |
针数: | 6 | Reach Compliance Code: | unknown |
风险等级: | 5.78 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.06 A | 基于收集器的最大容量: | 1.1 pF |
集电极-发射极最大电压: | 10 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 5000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HN3C14FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,10V V(BR)CEO,60MA I(C),SO | |
HN3C15F | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 7V V(BR)CEO | 40MA I(C) | TSOP | |
HN3C15FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C15FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,7V V(BR)CEO,40MA I(C),SO | |
HN3C16F | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 7V V(BR)CEO | 15MA I(C) | TSOP | |
HN3C16FT | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C16FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C16FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,7V V(BR)CEO,15MA I(C),SO | |
HN3C17F | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 5V V(BR)CEO | 20MA I(C) | TSOP | |
HN3C17FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |