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HN3C02FU PDF预览

HN3C02FU

更新时间: 2024-10-29 22:13:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器射频放大器小信号双极晶体管射频小信号双极晶体管电视光电二极管局域网
页数 文件大小 规格书
1页 95K
描述
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS)

HN3C02FU 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.38Is Samacsys:N
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:15 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):40最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):2400 MHz
Base Number Matches:1

HN3C02FU 数据手册

  

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