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HN3C06F PDF预览

HN3C06F

更新时间: 2024-10-30 19:43:35
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管晶体管
页数 文件大小 规格书
1页 35K
描述
TRANSISTOR 80 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SUPERMINI-6, BIP General Purpose Small Signal

HN3C06F 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-X6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.82最大集电极电流 (IC):0.08 A
集电极-发射极最大电压:12 V配置:SEPARATE, 2 ELEMENTS
JESD-30 代码:R-PDSO-X6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:UNSPECIFIED
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

HN3C06F 数据手册

  

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