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HN3C03FTE85L PDF预览

HN3C03FTE85L

更新时间: 2024-10-30 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
1页 34K
描述
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

HN3C03FTE85L 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.71
最大集电极电流 (IC):0.03 A基于收集器的最大容量:1.55 pF
集电极-发射极最大电压:12 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):35最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4000 MHzBase Number Matches:1

HN3C03FTE85L 数据手册

  

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