Datasheet > HMC579

HMC579

更新时间： 2024-11-24 14:57:39

品牌	Logo	应用领域
亚德诺 - ADI		倍频器
页数	文件大小	规格书
6页	292K
描述
x2有源倍频器芯片，32 - 46 GHz Fout

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMC579 数据手册

HMC579

v01.0608

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 32 - 46 GHz OUTPUT

Typical Applications

Features

The HMC579 is suitable for:

High Output Power: +13 dBm

Low Input Power Drive: 0 to +6 dBm

Fo Isolation: >25 dBc @ Fout= 38 GHz

100 KHz SSB Phase Noise: -127 dBc/Hz

Single Supply: +5V@ 70 mA

• Clock Generation Applications:

SONET OC-192 & SDH STM-64

• Point-to-Point & VSAT Radios

• Test Instrumentation

• Military EW / Radar

• Space

Die Size: 1.18 mm x 1.23 mm x 0.1 mm

Functional Diagram

General Description

The HMC579 die is a x2 active broadband frequency

multiplier utilizing GaAs PHEMT technology. When

driven by a +3 dBm signal, the multiplier provides

+13 dBm typical output power from 32 to 46 GHz.

The Fo isolation is >25 dBc at 38 GHz. The HMC579

is ideal for use in LO multiplier chains for Pt to Pt

& VSAT Radios yielding reduced parts count vs.

traditional approaches. The low additive SSB Phase

Noise of -127 dBc/Hz at 100 kHz offset helps main-

tain good system noise performance.

Electrical Speciﬁcations, T_A= +25° C, Vdd1, Vdd2 = 5.0V, 3 dBm Drive Level

Parameter

Min.

Typ.

16 - 23

32 - 46

Max.

Units

GHz

dBm

dBc

Frequency Range, Input

Frequency Range, Output

Output Power

Fo Isolation (with respect to output level)

Input Return Loss

Output Return Loss

SSB Phase Noise (100 kHz Offset)

Supply Current (Idd1, Idd2)

-127

dBc/Hz

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

_l^r_iⁱ_c^g_e^h_n^ts_se^of_is^th_g^ir_r^d_an^p_t^a_e^r_d^tie_b^s_y^th_im^a2^t_p^m_l0_ic^a_a^y_tA_io^re_nl^sp^u_o^l_rh^t_o^fa^r_t^o_h^m_eR_rw^itso_is^u_ea^se_ud^._n,_d^S_e^pC_r^ec_ahⁱ_n^fi_y^ce^a_pl^tmⁱ_a^o_tⁿ_e^ss_nt^sf_o^uo_r^br^j_p^ed_a^c_t^t,_e^t_n^oM_t^c_r^h_iA_g^a_hⁿ_t^g_s0^e_o1^w_f8_A^ith_n2^o_a4^u_lo^t_g^no_DP^ti_e^ch_v^e_i^._co_e^Nn_s^o_.e:_P^O9_hⁿ7_o^e_n8^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^lo3₂^g3₉^y_-4₄^W3₇^a₀^y₀^,F_•^Pa^._O^Ox_r^.:_d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w3^w_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

2 - 56

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

12 3 4 5 6

中文翻译

下载PDF

与HMC579相关器件

型号	品牌	获取价格	描述	数据表
HMC579_09	HITTITE	获取价格	GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 32 - 46 GHz OUTPUT
HMC5805A	ADI	获取价格	High P1dB Output Power: 24.5 dBm
HMC5805ALS6	ADI	获取价格	High P1dB Output Power: 24.5 dBm
HMC5805ALS6TR	ADI	获取价格	High P1dB Output Power: 24.5 dBm
HMC5805LS6	HITTITE	获取价格	Wide Band Low Power Amplifier,
HMC580ST89	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89_10	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
HMC580ST89E	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89ETR	HITTITE	获取价格	Wide Band Low Power Amplifier, 0MHz Min, 1000MHz Max, ROHS COMPLIANT, PLASTIC, SOT-89, SMT
HMC580ST89TR	HITTITE	获取价格	Wide Band Low Power Amplifier,

与HMC579相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC579

HMC579 数据手册

与HMC579相关器件

与HMC579相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC579

HMC579 数据手册

与HMC579相关器件

与HMC579相关文章

您还可以找

您在本页遇到什么问题？