HMC582LP5 / 582LP5E
v03.0811
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 11.1 - 12.4 GHz
Typical Applications
Features
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
Triple Output: Fo = 11.1 - 12.4 GHz
Fo/2 = 5.55 - 6.2 GHz
Fo/4 = 2.78 - 3.1 GHz
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
Pout: +9 dBm
Phase Noise: -110 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
• Military End-Use
Functional Diagram
General Description
The HMC582LP5 & HMC582LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC582LP5 & HMC582LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.
The VCO’s phase noise performance is excellent over
temperature, shock, and process due to the oscillator’s
monolithic structure. Power output is +9 dBm typical
from a +5V supply voltage. The prescaler and RF/2
functions can be disabled to conserve current if not
required. The voltage controlled oscillator is packaged
in a leadless QFN 5x5 mm surface mount package,
and requires no external matching components.
8
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/2
11.1 - 12.4
5.55 - 6.2
GHz
GHz
Frequency Range
Power Output
RFOUT
RFOUT/2
RFOUT/4
+5
+8
-9
+12
+14
-3
dBm
dBm
dBm
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
-110
dBc/Hz
Tune Voltage
Vtune
2
12
390
10
V
Supply Current
Icc(Dig) + Icc(Amp) + Icc(RF)
290
350
2
mA
µA
dB
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
1/2
2nd
3rd
32
25
30
dBc
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
5
MHz pp
MHz/V
MHz/°C
30
1.2
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
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8 - 1
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