Datasheet > HMC582LP5_11

HMC582LP5_11

更新时间： 2024-11-23 10:53:55

品牌	Logo	应用领域
HITTITE		输出元件
页数	文件大小	规格书
6页	367K
描述
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMC582LP5_11 数据手册

HMC582LP5 / 582LP5E

v03.0811

MMIC VCO w/ HALF FREQUENCY OUTPUT

& DIVIDE-BY-4, 11.1 - 12.4 GHz

Typical Applications

Features

Low noise MMIC VCO w/Half Frequency, Divide-by-4

Outputs for:

Triple Output: Fo = 11.1 - 12.4 GHz

Fo/2 = 5.55 - 6.2 GHz

Fo/4 = 2.78 - 3.1 GHz

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• SATCOM

Pout: +9 dBm

Phase Noise: -110 dBc/Hz @100 kHz Typ.

No External Resonator Needed

32 Lead 5x5mm SMT Package: 25mm²

• Military End-Use

Functional Diagram

General Description

The HMC582LP5 & HMC582LP5E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC582LP5 & HMC582LP5E integrate resona-

tors, negative resistance devices, varactor diodes

and feature half frequency and divide-by-4 outputs.

The VCO’s phase noise performance is excellent over

temperature, shock, and process due to the oscillator’s

monolithic structure. Power output is +9 dBm typical

from a +5V supply voltage. The prescaler and RF/2

functions can be disabled to conserve current if not

required. The voltage controlled oscillator is packaged

in a leadless QFN 5x5 mm surface mount package,

and requires no external matching components.

Electrical Speciﬁcations, T_A= +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V

Parameter

Min.

Typ.

Max.

Units

Fo/2

11.1 - 12.4

5.55 - 6.2

GHz

Frequency Range

Power Output

RFOUT

RFOUT/2

RFOUT/4

-9

+12

+14

-3

dBm

SSB Phase Noise @ 100 kHz Offset,

Vtune= +5V @ RFOUT

-110

dBc/Hz

Tune Voltage

Vtune

390

Supply Current

Icc(Dig) + Icc(Amp) + Icc(RF)

290

350

µA

Tune Port Leakage Current (Vtune= 13V)

Output Return Loss

Harmonics/Subharmonics

1/2

2nd

3rd

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= 5V

Frequency Drift Rate

MHz pp

MHz/V

MHz/°C

1.2

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

8 - 1

12 3 4 5 6

中文翻译

下载PDF

与HMC582LP5_11相关器件

型号	品牌	获取价格	描述	数据表
HMC582LP5E	HITTITE	获取价格	MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz
HMC582LP5E	ADI	获取价格	VCO with Fo/2 & Divide-by-4 SMT, 11.1-12.4 GHz
HMC582LP5ETR	HITTITE	获取价格	暂无描述
HMC582LP5TR	HITTITE	获取价格	Voltage Controlled Oscillator, 11100MHz Min, 12400MHz Max, PLASTIC, LEADLESS, QFN-32
HMC582LP5TR	ADI	获取价格	VCO with Fo/2 & Divide-by-4 SMT, 11.1-12.4 GHz
HMC583	ADI	获取价格	采用SMT封装的VCO，具有Fo/2，提供4分频，11.5 - 12.8 GHz
HMC583LP5	HITTITE	获取价格	MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.5 - 12.8 GHz
HMC583LP5E	HITTITE	获取价格	MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.5 - 12.8 GHz
HMC583LP5ERTR	HITTITE	获取价格	IC,VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR,1-CHANNEL,11.5GHZ-12.8GHZ,LLCC,32PIN,PLASTIC
HMC583LP5ETR	ADI	获取价格	VCO SMT with Fo/2 & Divide-by-4, 11.5 - 12.8 GHz

与HMC582LP5_11相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC582LP5_11

HMC582LP5_11 数据手册

与HMC582LP5_11相关器件

与HMC582LP5_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC582LP5_11

HMC582LP5_11 数据手册

与HMC582LP5_11相关器件

与HMC582LP5_11相关文章

您还可以找

您在本页遇到什么问题？