5秒后页面跳转
HMC5805LS6 PDF预览

HMC5805LS6

更新时间: 2024-11-23 21:05:47
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
10页 624K
描述
Wide Band Low Power Amplifier,

HMC5805LS6 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:3A001.B.2.D风险等级:5.71
射频/微波设备类型:WIDE BAND LOW POWERBase Number Matches:1

HMC5805LS6 数据手册

 浏览型号HMC5805LS6的Datasheet PDF文件第2页浏览型号HMC5805LS6的Datasheet PDF文件第3页浏览型号HMC5805LS6的Datasheet PDF文件第4页浏览型号HMC5805LS6的Datasheet PDF文件第5页浏览型号HMC5805LS6的Datasheet PDF文件第6页浏览型号HMC5805LS6的Datasheet PDF文件第7页 
HMC5805LS6  
v01.0613  
GaAs pHEMT MMIC  
0.25 WATT POWER AMPLIFIER, DC - 40 GHz  
Typical Applications  
Features  
The HMC5805LS6 is ideal for:  
• Test Instrumentation  
• Microwave Radio & VSAT  
• Military & Space  
High P1dB Output Power: 22 dBm  
High Psat Output Power: 24 dBm  
High Gain: 13.5 dB  
High Output IP3: 33 dBm  
• Telecom Infrastructure  
• Fiber Optics  
Supply Voltage: +10 V @ 175 mA  
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2  
Functional Diagram  
General Description  
The HMC5805LS6 is a GaAs pHEMT MMIC Distrib-  
uted Power Amplifier which operates between DC  
and 40 GHz. The amplifier provides 13 dB of gain,  
33 dBm output IP3 and +22 dBm of output power at  
1 dB gain compression while requiring 175 mA from  
a +10 V supply. The HMC5805LS6 exhibits a slightly  
positive gain slope from 8 to 32 GHz, making it ideal  
for EW, ECM, Radar and test equipment applica-  
tions. The HMC5805LS6 amplifier I/Os are internally  
matched to 50 Ohms and the 6x6 mm SMT package is  
well suited for automated assembly techniques.  
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
DC - 12  
13  
Max.  
Min.  
Typ.  
12 - 35  
13.5  
0.5  
Max.  
Min.  
Typ.  
35 - 40  
10  
Max.  
Units  
GHz  
dB  
Gain  
11  
11.5  
7
Gain Flatness  
0.35  
0.02  
18  
1.0  
0.05  
12  
dB  
Gain Variation Over Temperature  
Input Return Loss  
0.03  
15  
dB/ °C  
dB  
Output Return Loss  
24  
13  
11  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
20  
22  
19  
21  
16  
19  
dBm  
dBm  
dBm  
dB  
24  
23.5  
31  
21  
33  
27  
4.5  
4
7
Supply Current  
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)  
175  
175  
175  
mA  
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1

与HMC5805LS6相关器件

型号 品牌 获取价格 描述 数据表
HMC580ST89 HITTITE

获取价格

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89_10 HITTITE

获取价格

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
HMC580ST89E HITTITE

获取价格

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89ETR HITTITE

获取价格

Wide Band Low Power Amplifier, 0MHz Min, 1000MHz Max, ROHS COMPLIANT, PLASTIC, SOT-89, SMT
HMC580ST89TR HITTITE

获取价格

Wide Band Low Power Amplifier,
HMC581LP6 HITTITE

获取价格

HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC581LP6_09 HITTITE

获取价格

HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC581LP6E HITTITE

获取价格

HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC582 ADI

获取价格

采用SMT封装的VCO,具有Fo/2,提供4分频,11.1 -12.4 GHz
HMC582LP5 HITTITE

获取价格

MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz