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HMC581LP6E PDF预览

HMC581LP6E

更新时间: 2024-11-26 04:19:51
品牌 Logo 应用领域
HITTITE 射频下变频器
页数 文件大小 规格书
8页 389K
描述
HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz

HMC581LP6E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
特性阻抗:50 Ω构造:COMPONENT
下变频增益-最小值:7 dB最大中频频率:300 MHz
最小中频频率:50 MHzJESD-609代码:e3
LO 可调谐:YES最高工作温度:85 °C
最低工作温度:-40 °C最大射频输入频率:960 MHz
最小射频输入频率:800 MHz射频/微波设备类型:DOWN CONVERTER
端子面层:Matte Tin (Sn)Base Number Matches:1

HMC581LP6E 数据手册

 浏览型号HMC581LP6E的Datasheet PDF文件第2页浏览型号HMC581LP6E的Datasheet PDF文件第3页浏览型号HMC581LP6E的Datasheet PDF文件第4页浏览型号HMC581LP6E的Datasheet PDF文件第5页浏览型号HMC581LP6E的Datasheet PDF文件第6页浏览型号HMC581LP6E的Datasheet PDF文件第7页 
HMC581LP6 / 581LP6E  
v00.0806  
HIGH IP3 RFIC DUAL  
DOWNCONVERTER, 800 - 960 MHz  
Typical Applications  
Features  
The HMC581LP6 / HMC581LP6E is ideal for Wireless  
Infrastructure Applications:  
+26 dBm Input IP3  
Low Single Input LO Drive: 0 dBm  
9 dB Conversion Gain  
• GSM, GPRS & EDGE  
• CDMA & W-CDMA  
13 dB Noise Figure  
• Cellular / 3G Infrastructure  
Single Positive Supply: +5V @ 260 mA  
8
Functional Diagram  
General Description  
The HMC581LP6 & HMC581LP6E are high linear-  
ity Dual Down Converter Receiver ICs that operate  
from 800 - 960 MHz and deliver a +26 dBm input third  
order intercept point for UMTS & GSM applications.  
The passive mixer outputs and high dynamic range IF  
amplifier inputs are positioned so that an external IF  
filter can be placed in series between them. The con-  
verter provides a gain of 9 dB and typical single side  
band noise figure of 13 dB. The IC operates from a  
single +5V supply consuming 260 mA of current while  
requiring only 0 dBm LO drive. The design requires no  
external baluns, no external matching and supports IF  
frequencies between 50 and 300 MHz.  
Electrical Specifications, TA = +25° C, LO = 0 dBm, Vdd = +5V, IF = 105 MHz*  
Parameter  
Min.  
Typ.  
Max.  
Units  
MHz  
MHz  
MHz  
dB  
Frequency Range, RF  
Frequency Range, LO  
Frequency Range, IF  
Conversion Gain  
800 - 960  
700 - 1160  
50 - 300  
7
9
13  
Noise Figure (SSB)  
LO to RF Isolation  
LO to IF Isolation  
dB  
4
dB  
10  
dB  
RF to IF Isolation  
15  
dB  
IP3 (Input)  
23  
26  
dBm  
dBm  
dB  
1 dB Compression (Input)  
Branch Isolation  
9.5  
40  
LO Drive Input Level (Typical)  
-4 to +4  
dBm  
Supply Current (Idd for LO & IF)  
(IF bias resistor= 4.7 Ohms)  
256  
mA  
* Unless otherwise noted all measurements with low side LO & IF = 105 MHz.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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