Datasheet > HMC5805ALS6TR

HMC5805ALS6TR

更新时间： 2024-11-27 01:11:19

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
10页	775K
描述
High P1dB Output Power: 24.5 dBm

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HMC5805ALS6TR 数据手册

HMC5805ALS6

v01.1216

GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER

DC - 40 GHz

Typical Applications

Features

The HMC5805ALS6 is ideal for:

• Test Instrumentation

• Microwave Radio & VSAT

• Military & Space

High P1dB Output Power: 24.5 dBm

High Psat Output Power: 27 dBm

Gain: 11.5 dB

Output IP3: 29 dBm

• Telecom Infrastructure

• Fiber Optics

Supply Voltage: +10 V @ 175 mA

16 Lead Ceramic 6x6 mm SMT Package: 36 mm²

Functional Diagram

General Description

The HMC5805ALS6 is a GaAs pHEMT MMIC Dis-

tributed Power Ampliﬁer which operates between DC

and 40 GHz. The ampliﬁer provides 11.5 dB of gain,

29 dBm output IP3 and +24 dBm of output power at

1 dB gain compression while requiring 175 mA from

a +10 V supply. The HMC5805ALS6 is ideal for EW,

ECM, Radar and test equipment applications. The

HMC5805ALS6 ampliﬁer I/Os are internally matched

to 50 Ohms and the 6x6 mm SMT package is well

suited for automated assembly techniques.

Electrical Speciﬁcations, T_A= +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*

Parameter

Frequency Range

Min.

Typ.

DC - 5

12.5

1.0

Max.

Min.

Typ.

5 - 30

11.5

0.75

0.02

Max.

Min.

Typ.

30 - 40

11.5

0.75

0.025

Max.

Units

GHz

Gain

Gain Flatness

Gain Variation Over Temperature

Input Return Loss

0.01

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

24.5

dBm

4.5

Supply Current

(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)

175

* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Speciﬁcations subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc.,

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

12 3 4 5 6 7...10

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与HMC5805ALS6TR相关器件

型号	品牌	获取价格	描述	数据表
HMC5805LS6	HITTITE	获取价格	Wide Band Low Power Amplifier,
HMC580ST89	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89_10	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
HMC580ST89E	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89ETR	HITTITE	获取价格	Wide Band Low Power Amplifier, 0MHz Min, 1000MHz Max, ROHS COMPLIANT, PLASTIC, SOT-89, SMT
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HMC581LP6	HITTITE	获取价格	HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC581LP6_09	HITTITE	获取价格	HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC581LP6E	HITTITE	获取价格	HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC582	ADI	获取价格	采用SMT封装的VCO，具有Fo/2，提供4分频，11.1 -12.4 GHz

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