5秒后页面跳转
HMC5805ALS6 PDF预览

HMC5805ALS6

更新时间: 2024-11-24 01:11:19
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
10页 775K
描述
High P1dB Output Power: 24.5 dBm

HMC5805ALS6 数据手册

 浏览型号HMC5805ALS6的Datasheet PDF文件第2页浏览型号HMC5805ALS6的Datasheet PDF文件第3页浏览型号HMC5805ALS6的Datasheet PDF文件第4页浏览型号HMC5805ALS6的Datasheet PDF文件第5页浏览型号HMC5805ALS6的Datasheet PDF文件第6页浏览型号HMC5805ALS6的Datasheet PDF文件第7页 
HMC5805ALS6  
v01.1216  
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER  
DC - 40 GHz  
Typical Applications  
Features  
The HMC5805ALS6 is ideal for:  
• Test Instrumentation  
• Microwave Radio & VSAT  
• Military & Space  
High P1dB Output Power: 24.5 dBm  
High Psat Output Power: 27 dBm  
Gain: 11.5 dB  
Output IP3: 29 dBm  
• Telecom Infrastructure  
• Fiber Optics  
Supply Voltage: +10 V @ 175 mA  
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2  
Functional Diagram  
General Description  
The HMC5805ALS6 is a GaAs pHEMT MMIC Dis-  
tributed Power Amplifier which operates between DC  
and 40 GHz. The amplifier provides 11.5 dB of gain,  
29 dBm output IP3 and +24 dBm of output power at  
1 dB gain compression while requiring 175 mA from  
a +10 V supply. The HMC5805ALS6 is ideal for EW,  
ECM, Radar and test equipment applications. The  
HMC5805ALS6 amplifier I/Os are internally matched  
to 50 Ohms and the 6x6 mm SMT package is well  
suited for automated assembly techniques.  
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
DC - 5  
12.5  
1.0  
Max.  
Min.  
Typ.  
5 - 30  
11.5  
0.75  
0.02  
11  
Max.  
Min.  
Typ.  
30 - 40  
11.5  
0.75  
0.025  
11  
Max.  
Units  
GHz  
dB  
Gain  
9
9
Gain Flatness  
dB  
Gain Variation Over Temperature  
Input Return Loss  
0.01  
17  
dB/ °C  
dB  
Output Return Loss  
18  
13  
9
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
19  
25  
18  
24.5  
27  
23  
dBm  
dBm  
dBm  
dB  
27  
26  
34  
29  
26  
4.5  
4
7
Supply Current  
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)  
175  
175  
175  
mA  
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
For price, delivery, and to place orders: Analog Devices, Inc.,  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
Application Support: Phone: 1-800-ANALOG-D  
1

与HMC5805ALS6相关器件

型号 品牌 获取价格 描述 数据表
HMC5805ALS6TR ADI

获取价格

High P1dB Output Power: 24.5 dBm
HMC5805LS6 HITTITE

获取价格

Wide Band Low Power Amplifier,
HMC580ST89 HITTITE

获取价格

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89_10 HITTITE

获取价格

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
HMC580ST89E HITTITE

获取价格

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
HMC580ST89ETR HITTITE

获取价格

Wide Band Low Power Amplifier, 0MHz Min, 1000MHz Max, ROHS COMPLIANT, PLASTIC, SOT-89, SMT
HMC580ST89TR HITTITE

获取价格

Wide Band Low Power Amplifier,
HMC581LP6 HITTITE

获取价格

HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC581LP6_09 HITTITE

获取价格

HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
HMC581LP6E HITTITE

获取价格

HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz