5秒后页面跳转
HKT05N10 PDF预览

HKT05N10

更新时间: 2024-11-12 18:06:23
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 862K
描述
SOT-23

HKT05N10 数据手册

 浏览型号HKT05N10的Datasheet PDF文件第2页浏览型号HKT05N10的Datasheet PDF文件第3页浏览型号HKT05N10的Datasheet PDF文件第4页浏览型号HKT05N10的Datasheet PDF文件第5页 
HKT05N10  
HIGH VOLTAGE MOSFET (N-CHANNEL)  
FEATURES  
Low on-resistance:VDS=100V,RDS(ON)=115mΩ@VGS=10V,ID=3A  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Surface Mount device  
SOT-23-3L  
MECHANICAL DATA  
Case: SOT-23-3L  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
Marking:5N10  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Continuous drain current  
Pulsed drain current (Note 1)  
Power dissipation  
Symbol  
VDS  
VGS  
ID  
IDM  
PD  
RθJA  
TJ  
TSTG  
Value  
100  
Unit  
V
V
A
A
±
20  
5
20  
3
42  
150  
W
Thermal resistance from Junction to ambient  
Junction temperature  
Storage temperature  
°C/W  
°C  
°C  
-55 ~+150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
STATIC CHARACTERISTICS  
Drain-Source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
V(BR)DSS  
IDSS  
IGSS  
100  
V
VGS=0V, ID=250μA  
1
uA VDS=100V,  
VGS=0V  
±100 nA VDS=0V,  
VGS=±20V  
Gate-threshold voltage (note 1)  
VGS(th) 1.2 1.8  
95  
2.5  
115  
150  
1.2  
V
VDS=VGS, ID=250μA  
mΩ VGS=10V, ID=3A  
mΩ VGS=4.5V, ID=3A  
V
Drain-source on-resistance (note 1)  
RDS(ON)  
115  
0.7  
Diode forward voltage (note 1)  
DYNAMIC CHARACTERISTICS  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Gate Resistance  
VSD  
IS= 3A , VGS=0V  
Ciss  
Coss  
Crss  
Rg  
690  
120  
90  
2
pF  
pF  
pF  
Ω
VDS=25V, VGS=0V, f=1MHz  
VDS=0V, VGS=0V, f=1MHz  
5
nC VDD=30V,  
nC  
ID=3A  
VGS=4.5V,  
Total gate charge  
Qg  
15.5  
3.2  
4.7  
11  
8
VDD=30V,  
ID=3A  
Gate-source charge  
Gate-drain charge  
Turn-on delay time  
Turn-on rise time  
Turn-off delay time  
Turn-off fall time  
Qgs  
Qgd  
td(on)  
tr  
td(off)  
tf  
nC  
nC  
nS  
VGS=10V,  
nS VDS=30V, VGS=10 V,  
RGEN=2.5Ω,ID=2A  
35  
9
nS  
nS  
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .  
1/5  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与HKT05N10相关器件

型号 品牌 获取价格 描述 数据表
HKT100***U RENESAS

获取价格

レ-Chip (RFID)
HKT100U RENESAS

获取价格

μ-Chip (RFID)
HKT100XXXF RENESAS

获取价格

HKT100XXXF
HKT100Y01B RENESAS

获取价格

μ-Chip (RFID)
HKT100Y01F RENESAS

获取价格

μ-Chip (RFID)
HKT100Y01U RENESAS

获取价格

レ-Chip (RFID)
HKT4056 HOTTECH

获取价格

ESOP-8
HKT6206 HOTTECH

获取价格

SOT-23
HKTD120N04 HOTTECH

获取价格

TO-252
HKTD15N10 HOTTECH

获取价格

TO-252