HKT05N10
HIGH VOLTAGE MOSFET (N-CHANNEL)
FEATURES
Low on-resistance:VDS=100V,RDS(ON)=115mΩ@VGS=10V,ID=3A
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Surface Mount device
SOT-23-3L
MECHANICAL DATA
Case: SOT-23-3L
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
Marking:5N10
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current (Note 1)
Power dissipation
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
100
Unit
V
V
A
A
±
20
5
20
3
42
150
W
Thermal resistance from Junction to ambient
Junction temperature
Storage temperature
°C/W
°C
°C
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
STATIC CHARACTERISTICS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR)DSS
IDSS
IGSS
100
V
VGS=0V, ID=250μA
1
uA VDS=100V,
VGS=0V
±100 nA VDS=0V,
VGS=±20V
Gate-threshold voltage (note 1)
VGS(th) 1.2 1.8
95
2.5
115
150
1.2
V
VDS=VGS, ID=250μA
mΩ VGS=10V, ID=3A
mΩ VGS=4.5V, ID=3A
V
Drain-source on-resistance (note 1)
RDS(ON)
115
0.7
Diode forward voltage (note 1)
DYNAMIC CHARACTERISTICS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
VSD
IS= 3A , VGS=0V
Ciss
Coss
Crss
Rg
690
120
90
2
pF
pF
pF
Ω
VDS=25V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
5
nC VDD=30V,
nC
ID=3A
VGS=4.5V,
Total gate charge
Qg
15.5
3.2
4.7
11
8
VDD=30V,
ID=3A
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qgs
Qgd
td(on)
tr
td(off)
tf
nC
nC
nS
VGS=10V,
nS VDS=30V, VGS=10 V,
RGEN=2.5Ω,ID=2A
35
9
nS
nS
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .
1/5
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E-mail:hkt@heketai.com