HKTQ50N03
LOW VOLTAGE MOSFET (N-CHANNEL)
D
S
D
S
FEATURES
D
D
VDS=30V,RDS(ON)≤8.5mΩ@VGS=10 V,ID=15A
Ultra Low on-resistance
For Low power DC to DC converter application
For Load switch application
Surface Mount device
G
S
D
MECHANICAL DATA
1
2
3
4
8
7
6
5
Case: PDFN3333
G
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.012 grams (approximate)
Marking:Q50N03
S
PDFN3333
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Rating
30
Units
V
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
±20
50
V
Gate-Source Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
A
30
A
112
24
A
EAS
Single Pulse Avalanche Energy3
mJ
A
IAS
Avalanche Current
22
PD@TC=25℃
TSTG
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
37
W
℃
℃
-55 to 150
-55 to 150
TJ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
GS=0V , ID=250uA
GS=10 V , ID=15A
Min.
Typ.
---
Max.
---
Unit
BVDSS
Drain-Source Breakdown Voltage
V
V
30
V
6.2
9.5
1.5
---
8.5
15
mΩ
mΩ
V
RDS(ON)
VGS(th)
IDSS
Static Drain-Source On-Resistance2
Gate Threshold Voltage
VGS=4.5V , ID=15A
V
V
GS=VDS , ID =250uA
1.0
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2.4.
1
DS=30V , VGS=0V , TJ=25℃
Drain-Source Leakage Current
uA
VDS=24V , VGS=0V , TJ=125℃
GS=±20V , VDS=0V
---
10
V
IGSS
Rg
Gate-Source Leakage Current
Gate Resistance
---
±100
---
---
nA
Ω
VDS=0V , VGS=0V , f=1MHz
1.8
9.8
4.2
3.6
4
Qg
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=15V , VGS=10V , ID=20A
nC
Qgs
Qgd
Td(on)
Tr
---
---
---
V
DD=15V , VGS=10V , RG=3Ω,
8
---
ns
ID=15A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
30
---
4
---
Ciss
Coss
Crss
Input Capacitance
940
130
110
---
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
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