Datasheet > HKTQ65N03

HKTQ65N03

更新时间： 2024-06-27 12:13:16

品牌	Logo	应用领域
合科泰 - HOTTECH		光电二极管
页数	文件大小	规格书
4页	2295K
描述
PDFN3333

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中文翻译

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数据手册

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HKTQ65N03 数据手册

HKTQ65N03

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 V_DS=30V,R_DS(ON)≤5mΩ@V_GS=10 V,I_D=20A

 Ultra Low on-resistance

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

MECHANICAL DATA



Case: PDFN3333

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.012 grams (approximate)

Marking:Q65N03

PDFN3333

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

±20

Gate-Source Voltage

Continuous Drain Current¹

Pulsed Drain Current²

280

EAS

Single Pulse Avalanche Energy³

I_AS

Avalanche Current

P_D@T_C=25℃

T_STG

Total Power Dissipation⁴

Storage Temperature Range

Operating Junction Temperature Range

℃

-55 to 150

T_J

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

Parameter

Conditions

_GS=0V , I_D=250uA

_GS=10 V , I_D=20A

Min.

Typ.

---

Max.

---

Unit

BV_DSS

Drain-Source Breakdown Voltage

3.8

5.5

1.6

mΩ

R_DS(ON)

V_GS(th)

I_DSS

Static Drain-Source On-Resistance²

Gate Threshold Voltage

V_GS=4.5V , I_D=10A

_GS=V_DS, I_D=250uA

1.0

---

2.5

_DS=30V , V_GS=0V , T_J=25℃

---

100

Drain-Source Leakage Current

_GS=±20V , V_DS=0V

I_GSS

Gate-Source Leakage Current

Gate Resistance

-100

---

0.85

100

---

Ω

V_DS=0V , V_GS=0V , f=1MHz

Q_g

Total Gate Charge (10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

V_DS=15V , V_GS=10V , I_D=20A

Q_gs

Q_gd

T_d(on)

T_r

5.0

8.5

_DD=15V , V_GS=10V , R_G=3Ω,

I_D=20A

T_d(off)

T_f

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

1920

300

260

V_DS=15V , V_GS=0V , f=1MHz

Output Capacitance

Reverse Transfer Capacitance

E-mail:hkt@heketai.com

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中文翻译

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