Datasheet > HKTQ60N02

HKTQ60N02

更新时间： 2024-06-27 12:13:56

品牌	Logo	应用领域
合科泰 - HOTTECH		光电二极管
页数	文件大小	规格书
3页	1279K
描述
PDFN3333

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中文翻译

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数据手册

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HKTQ60N02 数据手册

HKTQ60N02

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 V_DS=20V,R_DS(ON)≤7.5mΩ@V_GS=2.5V,I_D= 8 A

 Ultra Low on-resistance

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

MECHANICAL DATA



Case: PDFN3333

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.012 grams (approximate)

Marking:Q60N02

PDFN3333

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

±12

Gate-Source Voltage

Continuous Drain Current¹

Pulsed Drain Current²

200

EAS

Single Pulse Avalanche Energy³

I_AS

Avalanche Current

P_D@T_C=25℃

T_STG

Total Power Dissipation⁴

Storage Temperature Range

Operating Junction Temperature Range

℃

-55 to 150

T_J

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

Parameter

Conditions

_GS=0V , I_D=250uA

_GS=4.5V , I_D=10A

Min.

Typ.

---

Max.

---

Unit

BV_DSS

Drain-Source Breakdown Voltage

4.5

5.8

7.5

1.0

mΩ

R_DS(ON)

V_GS(th)

I_DSS

Static Drain-Source On-Resistance²

Gate Threshold Voltage

V_GS=2.5V , I_D= 8 A

_GS=V_DS, I_D=250uA

0.5

---

0.75

---

_DS=12V , V_GS=0V , T_J=25℃

Drain-Source Leakage Current

V_DS=12V , V_GS=0V , T_J=125℃

_GS=±12V , V_DS=0V

---

I_GSS

Gate-Source Leakage Current

Gate Resistance

---

±100

---

Ω

V_DS=0V , V_GS=0V , f=1MHz

1.2

Q_g

Total Gate Charge (10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

V_DS=20V , V_GS=10V , I_D=10A

Q_gs

Q_gd

T_d(on)

T_r

8.7

---

_DD=20V , V_GS=10V , R_G=3Ω,

---

I_D=10A

T_d(off)

T_f

Turn-Off Delay Time

Fall Time

---

C_iss

C_oss

C_rss

Input Capacitance

4300

500

320

---

V_DS=20V , V_GS=0V , f=1MHz

Output Capacitance

Reverse Transfer Capacitance

---

E-mail:hkt@heketai.com

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