HKTG150N03
MOSFET (N-CHANNEL)
FEATURES
z Low on-resistance
z Fast switching speed
z Easily designed drive circuits
z Easy to parallel
MECHANICAL DATA
z
z
Case: PDFN5x6
Case Material: Molded Plastic. UL flammability
z Classification Rating: 94V-0
z
Weight: 0.016 grams (approximate)
Marking:G150N03
z
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
VDS
Value
Unit
V
30
±20V
120
Gate-source voltage
VGS
V
Continuous drain current
Power dissipation
ID
A
PD
75
W
Thermal resistance from Junction to ambient
Junction and Storage temperature
RθJA
TJ,TSTG
20
°C/W
°C
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
Off Characteristics
V(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
VGS=0V, ID=250uA
30
V
VDS=30V,
µA
IDSS
1
VGS=0V
VDS=0V,
IGSS
±100 nA
VGS=±20V
VGS(th)
1.0 1.5
2.4
V
VDS=20V,ID=250μA
2.7
3.4
mΩ
VGS=10V, ID=20A
Drain-source on-resistance (note 1)
RDS(ON)
mΩ
VGS=4.5V, ID=20A
3.6
6
Dynamic Characteristics
Input capacitance
Ciss
Coss
Crss
4500
800
pF
pF
pF
VDS=15V, VGS=0V, f=1MHz
Output capacitance
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time
640
td(on)
tr
td(off)
tf
11
80
39
92
nS
nS
nS
nS
Turn-on rise time
VDD=20V,VGS=10V,ID =4A
Rg=3Ω, RL=0.75Ω
Turn-off delay time
Turn-off fall time
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .
1 / 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com