HKTG48N10
MOSFET (N-CHANNEL)
FEATURES
z Low on-resistance
z Fast switching speed
z Easily designed drive circuits
z Easy to parallel
MECHANICAL DATA
z
z
Case: PDFN5x6
Case Material: Molded Plastic. UL flammability
z Classification Rating: 94V-0
z
Weight: 0.016 grams (approximate)
Marking:G48N10
z
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
VDS
Value
Unit
V
100
±20V
79
Gate-source voltage
VGS
V
Continuous drain current
Power dissipation
ID
A
PD
100
W
Thermal resistance from Junction to ambient
Junction and Storage temperature
RθJA
TJ,TSTG
45
°C/W
°C
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
Off Characteristics
V(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
VGS=0V, ID=250uA
100
V
VDS=80V,
VGS=0V
µA
IDSS
1
VDS=0V,
IGSS
±100 nA
2.5
VGS=±20V
VGS(th)
1.2 1.8
6.8
VDS=20V,ID=250μA
8
mΩ
mΩ
VGS=10V, ID=30A
Drain-source on-resistance (note 1)
RDS(ON)
VGS=4.5V, ID=15A
10.5 12.5
Dynamic Characteristics
Input capacitance
Ciss
Coss
Crss
3650
320
22
pF
pF
pF
VDS=50V.VGS=0V, f=1MHz
Output capacitance
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time
td(on)
tr
td(off)
tf
16
11
35
9
nS
nS
nS
nS
Turn-on rise time
VDD=50V. ID =40A
Rg=2Ω
Turn-off delay time
Turn-off fall time
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .
1/5
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E-mail:hkt@heketai.com