Datasheet > HKTG50N03

HKTG50N03

更新时间： 2024-12-01 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		光电二极管
页数	文件大小	规格书
4页	3009K
描述
PDFN5X6

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中文翻译

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数据手册

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HKTG50N03 数据手册

HKTG50N03

MOSFET (N-CHANNEL)

FEATURES

^zLow on-resistance

^zFast switching speed

^zEasily designed drive circuits

^zEasy to parallel

MECHANICAL DATA

Case: PDFN5x6

Case Material: Molded Plastic. UL flammability

z Classification Rating: 94V-0

Weight: 0.016 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

±20

Gate-Source Voltage

Continuous Drain Current¹

Pulsed Drain Current²

112

EAS

Single Pulse Avalanche Energy³

I_AS

Avalanche Current

P_D@T_C=25℃

T_STG

Total Power Dissipation⁴

Storage Temperature Range

Operating Junction Temperature Range

℃

-55 to 150

T_J

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

Parameter

Conditions

_GS=0V , I_D=250uA

_GS=10 V , I_D=15A

Min.

Typ.

---

Max.

---

Unit

BV_DSS

Drain-Source Breakdown Voltage

6.2

9.5

1.5

---

8.5

2.4

mΩ

R_DS(ON)

V_GS(th)

I_DSS

Static Drain-Source On-Resistance²

Gate Threshold Voltage

V_GS=4.5V , I_D=15A

_GS=V_DS, I_D=250uA

1.0

---

_DS=30V , V_GS=0V , T_J=25℃

Drain-Source Leakage Current

V_DS=24V , V_GS=0V , T_J=125℃

_GS=±20V , V_DS=0V

---

±100

---

I_GSS

Gate-Source Leakage Current

Gate Resistance

---

Ω

V_DS=0V , V_GS=0V , f=1MHz

1.8

9.8

4.2

3.6

Q_g

Total Gate Charge (10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

V_DS=15V , V_GS=10V , I_D=20A

Q_gs

Q_gd

T_d(on)

T_r

---

_DD=15V , V_GS=10V , R_G=3Ω,

---

I_D=15A

T_d(off)

T_f

Turn-Off Delay Time

Fall Time

---

C_iss

C_oss

C_rss

Input Capacitance

940

130

110

---

V_DS=15V , V_GS=0V , f=1MHz

Output Capacitance

Reverse Transfer Capacitance

---

1 / 4

E-mail:hkt@heketai.com

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中文翻译

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