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HKTD50N03 PDF预览

HKTD50N03

更新时间: 2024-06-27 12:11:39
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合科泰 - HOTTECH /
页数 文件大小 规格书
5页 3861K
描述
TO-252

HKTD50N03 数据手册

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HKTD50N03  
N-CHANNEL Power MOSFET  
FEATURES  
VDS=30V,RDS(ON)≤8.5mΩ@VGS=10 V,ID=20A  
Ultra Low on-resistance  
For Low power DC to DC converter application  
For Load switch application  
Surface Mount device  
TO-252  
MECHANICAL DATA  
Case: TO-252  
Case material: Molded Plastic. UL flammability 94V-0  
Weight:0.33grams(approximate)  
EQUIVALENT CIRCUIT  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
30  
Units  
V
VDS  
VGS  
ID@TC=25℃  
ID@TC=100℃  
IDM  
±20  
50  
V
Gate-Source Voltage  
Continuous Drain Current1  
Continuous Drain Current1  
Pulsed Drain Current2  
A
30  
A
112  
A
EAS  
Single Pulse Avalanche Energy3  
24  
mJ  
A
IAS  
Avalanche Current  
22  
PD@TC=25℃  
TSTG  
Total Power Dissipation4  
Storage Temperature Range  
Operating Junction Temperature Range  
37  
W
-55 to 150  
-55 to 150  
TJ  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Symbol  
Parameter  
Conditions  
GS=0V , ID=250uA  
GS=10 V , ID=20A  
Min.  
Typ.  
---  
Max.  
---  
Unit  
BVDSS  
Drain-Source Breakdown Voltage  
V
V
30  
V
6.8  
9.3  
1.5  
---  
8.5  
14  
3.0  
1
mΩ  
mΩ  
V
RDS(ON)  
VGS(th)  
IDSS  
Static Drain-Source On-Resistance2  
Gate Threshold Voltage  
VGS=4.5V , ID=20A  
V
V
GS=VDS , ID =250uA  
1.0  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
DS=30V , VGS=0V , TJ=25℃  
Drain-Source Leakage Current  
uA  
VDS=24V , VGS=0V , TJ=125℃  
GS=±20V , VDS=0V  
---  
10  
±100  
---  
---  
V
IGSS  
Rg  
Gate-Source Leakage Current  
Gate Resistance  
---  
nA  
VDS=0V , VGS=0V , f=1MHz  
1.8  
9.8  
4.2  
3.6  
4
Qg  
Total Gate Charge (10V)  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
VDS=15V , VGS=10V , ID=20A  
nC  
Qgs  
Qgd  
Td(on)  
Tr  
---  
---  
---  
V
DD=15V , VGS=10V , RG=3Ω,  
8
---  
ns  
ID=15A  
Td(off)  
Tf  
Turn-Off Delay Time  
Fall Time  
30  
---  
4
---  
Ciss  
Coss  
Crss  
Input Capacitance  
940  
130  
110  
---  
VDS=15V , VGS=0V , f=1MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
---  
---  
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