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HKTD7N65 PDF预览

HKTD7N65

更新时间: 2024-10-31 18:06:23
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 4484K
描述
TO-252

HKTD7N65 数据手册

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HKTD7N65  
N-CHANNEL Power MOSFET  
FEATURES  
VDS:650V, ID: 7A Max.  
RDS(ON) :1.3Ω(max.)@VGS=10V,ID=1A  
High density cell design for ultra low on-resistance  
Fully characterized avalanche voltage and current  
TO-252  
MECHANICAL DATA  
Case: TO-252  
EQUIVALENT CIRCUIT  
Case material: Molded Plastic. UL flammability 94V-0  
Weight:0.33grams(approximate)  
Marking:D7N65  
MAXIMUM RATINGS (TA=25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
650  
±30  
7
Unit  
Drain-source voltage  
V
VDS  
Gate-source voltage  
VGS  
ID  
V
Continuous drain current, VGS=10V  
Pulsed drain current (Note 1)  
Power dissipation  
A
28  
IDM  
PD  
A
W
27.2  
RθJA  
Thermal resistance from junction to ambient  
100  
°C/W  
TJ,TSTG  
EAS  
Operating junction and storage temperature  
Single Pulsed Avalanche Energy (note 1)  
-55~+150  
550  
°C  
mJ  
TL  
Lead Temperature for Soldering Purposes (1/8’’ from case for 10s)  
260  
°C  
Note: 1. EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C  
1/ 5  
©GUANGDONGHOTTECHINDUSTRIALCO.,LTD  
E-mail:hkt@heketai.com  

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