Datasheet > HKTD4N50

HKTD4N50

更新时间： 2024-07-16 10:39:34

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	2470K
描述
TO-252

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HKTD4N50 数据手册

HKTD4N50

N-CHANNEL Power MOSFET

FEATURES

 V^DS:500V, I^D: 5A Max.

 R^DS(ON):1.7Ω(max.)@V_GS=10V,I_D=1A

 High density cell design for ultra low on-resistance

 Fully characterized avalanche voltage and current

TO-252

MECHANICAL DATA



Case: TO-252

EQUIVALENT CIRCUIT

Case material: Molded Plastic. UL flammability 94V-0

Weight:0.33grams(approximate)

Marking:D4N50

MAXIMUM RATINGS (T_A=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-source voltage

500

V_DS

Gate-source voltage

V_GS

I_D

±30

Continuous drain current, V^GS=10V

Pulsed drain current (Note 1)

Power dissipation

I_DM

P_D

R_θJA

Thermal resistance from junction to ambient

100

°C/W

T^J,T^STG

E^AS

Operating junction and storage temperature

Single Pulsed Avalanche Energy (note 1)

-55~+150

°C

T^L

Lead Temperature for Soldering Purposes (1/8’’ from case for 10s)

260

°C

Note: 1. E^AScondition: V^DD=20V,L=0.5mH, R^G=25Ω, Starting T^J= 25°C

©GUANGDONGHOTTECHINDUSTRIALCO.,LTD

E-mail:hkt@heketai.com

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