Datasheet > HKT02N10

HKT02N10

更新时间： 2024-11-12 18:06:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	1624K
描述
SOT-23

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数据手册

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HKT02N10 数据手册

HKT02N10

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Low on-resistance:V_DS=100V ,R_DS(ON)≤280mΩ@V_GS=10V,I_D=2A

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

Marking:1002



MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

100

±20

Unit

Gate-source voltage

V_GS

I_D

Continuous drain current

Pulsed drain current (Note 1)

Power dissipation

I_DM

P_D

1.2

105

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

T_J

°C/W

°C

150

Storage temperature

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage (note 1)

100

V^GS=0V, I^D=250μA

V_DS=60V,

V^GS=0V

μA

I_DSS

V_DS=0V,

I_GSS

±100 nA

3.0

VGS=±20V

V_GS(th)1.1

R_DS(ON)

g_FS

V^DS=V^GS, I^D=250μA

VGS=10V, ID=3A

VGS=4.5V, ID=3A

V^DS=15V, I^D=2A

250

280 mΩ

Drain-source on-resistance (note 1)

260

310 mΩ

Forward transconductance (note 1)

Input capacitance

1.4

C_iss

C_oss

C_rss

t_d(on)

t_r

330

V_{DS=50V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

VDD=50V, VGS=10V,

RGEN=1Ω, ID=1.3A

Turn-off delay time

t_d(off)

t_f

Turn-off fall time

Total gate charge

Q_g

5.3

1.4

1.3

Gate-source charge

Q_gs

Q_gd

V_SD

nC VDS=50V,VGS=4.5V,ID=3A

Gate-drain charge

Diode forward voltage (note 1)

IS=2A, VGS=0V

1.2

Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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