Datasheet > HFP630

HFP630

更新时间： 2024-11-02 05:36:03

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	296K
描述
200V N-Channel MOSFET

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中文翻译

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数据手册

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HFP630 数据手册

July 2005

BV_DSS= 200 V

_{DS(on) typ}= 0.34 Ω

HFP630

200V N-Channel MOSFET

I_D= 9 A

TO-220

FEATURES

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 22 nC (Typ.)

Extended Safe Operating Area

Lower R_DS(ON): 0.34 Ω (Typ.) @V_GS=10V

100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

200

9.0

I_D

– Continuous (T_C= 25℃)

– Continuous (T_C= 100℃)

Drain Current

5.7

I_DM

V_GS

E_AS

I_AR

Drain Current

– Pulsed

(Note 1)

Gate-Source Voltage

±30

160

9.0

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

7.2

V/ns

5.5

0.57

W/℃

℃

- Derate above 25℃

Operating and Storage Temperature Range

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

Junction-to-Case

Case-to-Sink

0.5

1.74

℃/W

Junction-to-Ambient

62.5

R_θJA

◎ SEMIHOW REV.A0,July 2005

12 3 4 5 6 7 8

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