Datasheet > HFP640

HFP640

更新时间： 2024-11-02 12:49:59

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	309K
描述
200V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HFP640 数据手册

July 2005

BV_DSS= 200 V

_{DS(on) typ}= 0.145Ω

HFP640

200V N-Channel MOSFET

I_D= 18 A

TO-220

FEATURES

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 37 nC (Typ.)

Extended Safe Operating Area

Lower R_DS(ON): 0.145 Ω (Typ.) @V_GS=10V

100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

200

I_D

– Continuous (T_C= 25℃)

– Continuous (T_C= 100℃)

Drain Current

11.4

I_DM

V_GS

E_AS

I_AR

Drain Current

– Pulsed

(Note 1)

Gate-Source Voltage

±30

250

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

13.9

5.5

V/ns

139

1.11

W/℃

℃

- Derate above 25℃

Operating and Storage Temperature Range

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

Junction-to-Case

Case-to-Sink

0.5

0.9

℃/W

Junction-to-Ambient

62.5

R_θJA

◎ SEMIHOW REV.A0,July 2005

12 3 4 5 6 7 8

中文翻译

下载PDF

与HFP640相关器件

型号	品牌	获取价格	描述	数据表
HFP644	SEMIHOW	获取价格	250V N-Channel MOSFET
HFP6N90	SEMIHOW	获取价格	900V N-Channel MOSFET
HFP6N90	HUASHAN	获取价格	TO-220
HFP70N03V	HUASHAN	获取价格	TO-220
HFP70N06	HUASHAN	获取价格	TO-220
HFP730	SEMIHOW	获取价格	400V N-Channel MOSFET
HFP730	HUASHAN	获取价格	N-Channel Enhancement Mode Field Effect Transistor
HFP740	HUASHAN	获取价格	N-Channel Enhancement Mode Field Effect Transistor
HFP75N08	HUASHAN	获取价格	N-Channel MOSFET
HFP75N75	SEMIHOW	获取价格	75V N-Channel MOSFET