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HFP740 PDF预览

HFP740

更新时间: 2024-02-23 06:45:46
品牌 Logo 应用领域
华汕 - HUASHAN 晶体晶体管
页数 文件大小 规格书
6页 319K
描述
N-Channel Enhancement Mode Field Effect Transistor

HFP740 数据手册

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Shantou Huashan Electronic Devices Co.,Ltd.  
HFP740  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
TO-220  
This Power MOSFET is produced using advanced planar stripe, DMOS  
technology. This latest technology has been especially designed to minimize  
on-state resistance, have a high rugged avalanche characteristics. This  
devices is specially well suited for half bridge and full bridge resonant  
topolgy like a electronic lamp ballast.  
1- G 2-D 3-S  
Features  
10A, 400V, RDS(on) <0.55@VGS = 10 V  
• Fast switching  
• 100% avalanche tested  
• Improved dv/dt capability  
• Equivalent Type:IRF740  
Maximum RatingsTa=25unless otherwise specified)  
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃  
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃  
VDSS —— Drain-Source Voltage ----------------------------------------------------------400V  
VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 400V  
VGSS —— Gate-Source Voltage -------------------------------------------------------------------------- ±20V  
ID —— Drain Current (Continuous) --------------------------------------------------------------------- 10A  
PD —— Maximum Power Dissipation --------------------------------------------------------------- 125W  
IAR —— Avalanche Current, Repetitive or Not-Repetitive  
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 10 A  
EAS—— Single Pulse Avalanche Energy  
(starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------- 450 mJ  
EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ  
Thermal Characteristics  
Symbol  
Rthj-case  
Items  
TO-220  
Max 1.0  
Unit  
/W  
Thermal Resistance Junction-case  
Rthj-amb  
Rth c-s  
Thermal Resistance Junction-ambient  
Thermal Resistance Case-sink  
Max 62.5  
Typ 0.5  
/W  
/W  

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