Datasheet > HFP740

HFP740

更新时间： 2024-02-03 03:36:53

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
6页	319K
描述
N-Channel Enhancement Mode Field Effect Transistor

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HFP740 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HFP740

N-Channel Enhancement Mode Field Effect Transistor

█ General Description

TO-220

This Power MOSFET is produced using advanced planar stripe, DMOS

technology. This latest technology has been especially designed to minimize

on-state resistance, have a high rugged avalanche characteristics. This

devices is specially well suited for half bridge and full bridge resonant

topolgy like a electronic lamp ballast.

1- G 2-D 3-S

█ Features

• 10A, 400V, R_DS(on) <0.55Ω@V_GS= 10 V

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Equivalent Type:IRF740

█ Maximum Ratings（Ta=25℃ unless otherwise specified）

T_stg——Storage Temperature ------------------------------------------------------ -55~150℃

T_j——Operating Junction Temperature -------------------------------------------------- 150℃

V_DSS—— Drain-Source Voltage ----------------------------------------------------------400V

V_DGR—— Drain-Gate Voltage (R_GS=20kΩ) ------------------------------------------------------------ 400V

V_GSS—— Gate-Source Voltage -------------------------------------------------------------------------- ±20V

I_D—— Drain Current (Continuous) --------------------------------------------------------------------- 10A

P_D—— Maximum Power Dissipation --------------------------------------------------------------- 125W

I_AR—— Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 10 A

E_AS—— Single Pulse Avalanche Energy

(starting Tj = 25℃, I_D= I_AR, V_DD= 50 V) --------------------------------------------------- 450 mJ

E_AR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ

█ Thermal Characteristics

Symbol

Rthj-case

Items

TO-220

Max 1.0

Unit

℃/W

Thermal Resistance Junction-case

Rthj-amb

Rth c-s

Thermal Resistance Junction-ambient

Thermal Resistance Case-sink

Max 62.5

Typ 0.5

℃/W

12 3 4 5 6

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