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HFP644 PDF预览

HFP644

更新时间: 2024-11-02 05:36:03
品牌 Logo 应用领域
SEMIHOW /
页数 文件大小 规格书
8页 639K
描述
250V N-Channel MOSFET

HFP644 数据手册

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Dec 2005  
BVDSS = 250 V  
DS(on) typ = 0.22 Ω  
R
HFP644  
250V N-Channel MOSFET  
ID = 14 A  
TO-220  
FEATURES  
Originative New Design  
1
2
3
Superior Avalanche Rugged Technology  
Robust Gate Oxide Technology  
Very Low Intrinsic Capacitances  
Excellent Switching Characteristics  
Unrivalled Gate Charge : 42 nC (Typ.)  
Extended Safe Operating Area  
Lower RDS(ON) : 0.22 Ω (Typ.) @VGS=10V  
100% Avalanche Tested  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
V
VDSS  
Drain-Source Voltage  
Drain Current  
250  
14  
ID  
– Continuous (TC = 25℃)  
– Continuous (TC = 100℃)  
A
Drain Current  
8.9  
56  
A
IDM  
VGS  
EAS  
IAR  
Drain Current  
– Pulsed  
(Note 1)  
A
Gate-Source Voltage  
±30  
480  
14  
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25℃)  
13.9  
5.5  
mJ  
V/ns  
139  
1.11  
W
W/℃  
- Derate above 25℃  
Operating and Storage Temperature Range  
TJ, TSTG  
TL  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
300  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
Junction-to-Case  
Case-to-Sink  
--  
0.5  
--  
0.9  
--  
℃/W  
Junction-to-Ambient  
62.5  
RθJA  
SEMIHOW REV.A0,Dec 2005  

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