Datasheet > HFP830

HFP830

更新时间： 2024-02-24 07:43:48

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
6页	393K
描述
N-Channel Enhancement Mode Field Effect Transistor

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HFP830 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HFP830

N-Channel Enhancement Mode Field Effect Transistor

█ General Description

TO-220

This Power MOSFET is produced using planar stripe, DMOS

technology. This latest technology has been especially designed to

minimize on-state resistance, have a high rugged avalanche

characteristics. This devices is specially well suited for half bridge

and full bridge resonant topolgy like a electronic lamp ballast.

1- G 2-D 3-S

█ Features

• 4.5A, 500V, R_DS(on) = 1.5Ω@V_GS= 10 V

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Equivalent Type:IRF830

█ Maximum Ratings（Ta=25℃ unless otherwise specified）

T_stg——Storage Temperature ------------------------------------------------------ -55~150℃

T_j——Operating Junction Temperature ---------------------------------------------- -55~150℃

V_DSS—— Drain-Source Voltage ---------------------------------------------------------- 500V

V_DGR—— Drain-Gate Voltage (R_GS=1MΩ) --------------------------------------------------------- 500V

V_GSS—— Gate-Source Voltage ------------------------------------------------------------------------ ±20V

I_D—— Drain Current (Continuous) ------------------------------------------------------------------- 4.5A

P_D—— Maximum Power Dissipation -------------------------------------------------------------- 75W

I_AR—— Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 4.5 A

E_AS—— Single Pulse Avalanche Energy

(starting Tj = 25℃, I_D= I_AR, V_DD= 50 V) --------------------------------------------------270 mJ

E_AR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) --------------- 7.3mJ

█ Thermal Characteristics

Symbol

Rthj-case

Items

TO-220

Max 1.71

Unit

℃/W

Thermal Resistance Junction-case

Rthj-amb

Rth c-s

Thermal Resistance Junction-ambient

Thermal Resistance Case-sink

Max 62.5

Typ 0.5

℃/W

12 3 4 5 6

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