Datasheet > HFP640

HFP640

更新时间： 2024-01-18 06:57:42

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
6页	357K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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HFP640 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HFP640

N-Channel Enhancement Mode Field Effect Transistor

█ General Description

TO-220

These power MOSFETs is designed for high voltage, high speed power

switching applications such as switching regulators, converters,

solenoid and relay drivers. And DC-DC&DC-AC Converters for

Telecom,Industrial and Consumer Environment

1- G 2-D 3-S

█ Features

• 18A,200V,R_DS(on) <0.18Ω@V_GS=10 V

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Equivalent Type:IRF640

█ Maximum Ratings（Ta=25℃ unless otherwise specified）

T_stg——Storage Temperature ------------------------------------------------------ -55~150℃

T_j——Operating Junction Temperature -------------------------------------------------- 150℃

V_DSS—— Drain-Source Voltage ---------------------------------------------------------- 200V

V_DGR—— Drain-Gate Voltage (R_GS=20kΩ) ------------------------------------------------------------ 200V

V_GSS—— Gate-Source Voltage ------------------------------------------------------------------------ ±20V

I_D—— Drain Current (Continuous) ------------------------------------------------------------------- 18A

P_D—— Maximum Power Dissipation ------------------------------------------------------------- 125W

I_AR—— Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A

E_AS—— Single Pulse Avalanche Energy

(starting Tj = 25℃, I_D= I_AR, V_DD= 50 V) --------------------------------------------------- 320mJ

E_AR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ

█ Thermal Characteristics

Symbol

Rthj-case

Items

TO-220

Max 1.0

Unit

℃/W

Thermal Resistance Junction-case

Rthj-amb

Rth c-s

Thermal Resistance Junction-ambient

Thermal Resistance Case-sink

Max 62.5

Typ 0.5

℃/W

12 3 4 5 6

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