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HFA200MD40CPBF PDF预览

HFA200MD40CPBF

更新时间: 2024-11-28 13:08:19
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网软恢复二极管
页数 文件大小 规格书
5页 295K
描述
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HFA200MD40CPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PUFM-X3Reach Compliance Code:compliant
风险等级:5.71应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.36 VJEDEC-95代码:TO-244AB
JESD-30 代码:R-PUFM-X3元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:200 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大反向电流:40 µA
最大反向恢复时间:0.12 µs表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFA200MD40CPBF 数据手册

 浏览型号HFA200MD40CPBF的Datasheet PDF文件第2页浏览型号HFA200MD40CPBF的Datasheet PDF文件第3页浏览型号HFA200MD40CPBF的Datasheet PDF文件第4页浏览型号HFA200MD40CPBF的Datasheet PDF文件第5页 
PD-2.450 rev. B 01/99  
HFA200MD40C  
HEXFREDTM  
Ultrafast, Soft Recovery Diode  
VR = 400V  
LUG  
TERMINAL  
CATHODE  
LUG  
TERMINAL  
ANODE 1  
LUG  
TERMINAL  
ANODE 2  
VF(typ.)ƒ = 0.9V  
IF(AV) = 200A  
• Reduced RFI and EMI  
• Reduced Snubbing  
• Extensive Characterization of  
Recovery Parameters  
Qrr (typ.) = 330nC  
IRRM(typ.)= 8.1A  
trr(typ.)= 45ns  
Isolated Base  
di(rec)M/dt (typ.)ƒ = 270A/µs  
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency  
power conditioning systems. An extensive characterization of the recovery  
behavior for different values of current, temperature and di/dt simplifies the  
calculations of losses in the operating conditions. The softness of the recovery  
eliminates the need for a snubber in most applications. These devices are  
ideally suited for power converters, motors drives and other applications where  
switching losses are significant portion of the total losses.  
TO-244AB  
(ISOLATED)  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
400  
172  
83  
1200  
1.4  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
Continuous Forward Current  
Continuous Forward Current  
Single Pulse Forward Current   
Non-Repetitive Avalanche Energy ‚  
Maximum Power Dissipation  
A
EAS  
mJ  
W
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
278  
111  
TJ  
TSTG  
Operating Junction and  
Storage Temperature Range  
C
-55 to +150  
Parameter  
Min.  
––––  
Typ.  
––––  
––––  
0.10  
Max.  
0.45  
Units  
RthJC  
Junction-to-Case, Single Leg Conducting  
Junction-to-Case, Both Legs Conducting  
Case-to-Sink, Flat , Greased Surface  
Weight  
°C/W  
K/W  
––––  
0.23  
RthCS  
Wt  
––––  
––––  
––––  
40 (4.6)  
40 (4.6)  
80  
––––  
79 (2.8)  
––––  
––––  
––––  
––––  
g (oz)  
Mounting Torque „  
30 (3.4)  
30 (3.4)  
––––  
lbf•in  
(N•m)  
TerminalTorque  
Vertical Pull  
lbf•in  
2 inch Lever Pull  
––––  
35  
Note:  Limited by junction temperature  
‚ L = 100µH, duty cycle limited by max TJ  
ƒ 125°C  
„
Mounting surface must be smooth, flat, free or burrs or other  
protrusions. Apply a thin even film or thermal grease to mounting  
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps  
until desired or maximum torque limits are reached. Module  
1

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