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HFA25TB60S PDF预览

HFA25TB60S

更新时间: 2024-11-28 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快软恢复二极管
页数 文件大小 规格书
6页 177K
描述
Ultrafast Soft Recovery Diode, 25 A

HFA25TB60S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:R-PSSO-G2
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.69
Is Samacsys:NBase Number Matches:1

HFA25TB60S 数据手册

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HFA25TB60S  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 25 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
3
1
• Reduced parts count  
N/C  
Anode  
D2PAK  
DESCRIPTION  
HFA25TB60S is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 25 A continuous current, the  
HFA25TB60S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA25TB60S is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
VF at 25 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
25 A  
trr (typical)  
23 ns  
TJ (maximum)  
150 °C  
112 nC  
250 A/µs  
10 A  
Qrr (typical)  
dI(rec)M/dt (typical)  
IRRM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
25  
225  
IFSM  
IFRM  
A
Maximum repetitive forward current  
100  
TC = 25 °C  
125  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
50  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93086  
Revision: 22-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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