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HFA25TB60STRL

更新时间： 2024-11-28 13:08:19
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
6页 195K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3

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HFA25TB60STRL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-263包装说明：R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.71其他特性：LOW NOISE
应用：ULTRA FAST SOFT RECOVERY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.7 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
最大非重复峰值正向电流：225 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最大输出电流：25 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：125 W认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.075 µs
子类别：Rectifier Diodes表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HFA25TB60STRL 数据手册

 浏览型号HFA25TB60STRL的Datasheet PDF文件第2页浏览型号HFA25TB60STRL的Datasheet PDF文件第3页浏览型号HFA25TB60STRL的Datasheet PDF文件第4页浏览型号HFA25TB60STRL的Datasheet PDF文件第5页浏览型号HFA25TB60STRL的Datasheet PDF文件第6页 
HFA25TB60  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 25 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
cathode  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
3
Cathode Anode  
DESCRIPTION  
TO-220AC  
HFA25TB60 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 25 A continuous current, the  
HFA25TB60 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited  
for applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
PRODUCT SUMMARY  
VR  
VF at 25 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
25 A  
trr (typical)  
23 ns  
TJ (maximum)  
Qrr (typical)  
dI(rec)M/dt (typical)  
IRRM  
150 °C  
112 nC  
250 A/µs  
10 A  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
25  
225  
IFSM  
IFRM  
A
Maximum repetitive forward current  
100  
TC = 25 °C  
125  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
50  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93085  
Revision: 30-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
123456

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