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HFA280NJ60CPBF PDF预览

HFA280NJ60CPBF

更新时间: 2024-11-28 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管通用无线电局域网超快软恢复二极管
页数 文件大小 规格书
7页 141K
描述
HEXFRED® Ultrafast Soft Recovery Diode, 280 A

HFA280NJ60CPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-244
包装说明:ROHS COMPLIANT PACKAGE-2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
Factory Lead Time:18 weeks风险等级:5.45
Is Samacsys:N应用:UFSRHP
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.64 VJEDEC-95代码:TO-244
JESD-30 代码:R-XUFM-X2最大非重复峰值正向电流:600 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:292 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.14 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFA280NJ60CPBF 数据手册

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HFA280NJ60CPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 280 A  
FEATURES  
• Very low Qrr and trr  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
Lug  
terminal  
anode 1  
Lug  
terminal  
anode 2  
RoHS  
COMPLIANT  
BENEFITS  
• Reduced RFI and EMI  
• Reduced snubbing  
Base common  
cathode  
DESCRIPTION  
TO-244  
HEXFRED® diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems. An  
extensive characterization of the recovery behavior for  
different values of current, temperature and dI/dt simplifies  
the calculations of losses in the operating conditions. The  
softness of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
power converters, motors drives and other applications  
where switching losses are significant portion of the total  
losses.  
PRODUCT SUMMARY  
IF(AV)  
VR  
F(DC) at TC  
280 A  
600 V  
I
149 A at 100 °C  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
292  
149  
600  
2.2  
UNITS  
Cathode to anode voltage  
VR  
V
TC = 25 °C  
Continuous forward current  
IF  
TC = 100 °C  
A
Single pulse forward current  
IFSM  
EAS  
Limited by junction temperature  
L = 100 µH, duty cycle limited by maximum TJ  
TC = 25 °C  
Non-repetitive avalanche energy  
mJ  
W
657  
263  
Maximum power dissipation  
PD  
T
C = 100 °C  
Operating junction and storage  
temperature range  
TJ, TStg  
- 55 to + 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
600  
TYP.  
MAX.  
UNITS  
Cathode to anode  
breakdown voltage  
VBR  
IR = 100 µA  
-
-
IF = 105 A  
IF = 210 A  
-
-
-
1.33  
1.53  
1.22  
1.8  
2.1  
V
Maximum forward voltage  
VFM  
See fig. 1  
IF = 105 A, TJ = 125 °C  
TJ = 125 °C, VR = 600 V  
VR = 200 V  
1.64  
Maximum reverse  
leakage current  
IRM  
See fig. 2  
See fig. 3  
-
2.4  
8
mA  
Junction capacitance  
Series inductance  
CT  
LS  
-
-
280  
5.0  
400  
-
pF  
nH  
From top of terminal hole to mounting plane  
Document Number: 94067  
Revision: 01-Aug-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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