DATASHEET
HFA3046, HFA3096, HFA3127, HFA3128
Ultra High Frequency Transistor Arrays
FN3076
Rev.16.00
Jan 24, 2019
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
ultra high frequency transistor arrays that are fabricated from
the Renesas complementary bipolar UHF-1 process. Each
array consists of five dielectrically isolated transistors on a
common monolithic substrate. The NPN transistors exhibit a
Features
• NPN transistor (f ) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
T
• NPN current gain (h ) . . . . . . . . . . . . . . . . . . . . . . . . 130
FE
• NPN early voltage (V ). . . . . . . . . . . . . . . . . . . . . . . . 50V
A
f of 8GHz while the PNP transistors provide a f of 5.5GHz.
T
T
• PNP transistor (f ) . . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz
T
Both types exhibit low noise (3.5dB), making them ideal for
high frequency amplifier and mixer applications.
• PNP current gain (h ) . . . . . . . . . . . . . . . . . . . . . . . . . 60
FE
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
• PNP early voltage (V ). . . . . . . . . . . . . . . . . . . . . . . . .20V
A
• Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
• Collector to collector leakage. . . . . . . . . . . . . . . . . . .<1pA
• Complete isolation between transistors
• Pin compatible with industry standard 3XXX series arrays
• Pb-free (RoHS compliant)
Application note AN9315 illustrates the use of these devices
as RF amplifiers.
Applications
Related Literature
• VHF/UHF amplifiers
• VHF/UHF mixers
• IF converters
For a full list of related documents, visit our website:
• HFA3046, HFA3096, HFA3127, HFA3128 device pages
• Synchronous detectors
FN3076 Rev.16.00
Jan 24, 2019
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