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HFA25TB60STRR PDF预览

HFA25TB60STRR

更新时间: 2024-11-28 13:01:35
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管软恢复二极管
页数 文件大小 规格书
6页 263K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, D2PAK-3

HFA25TB60STRR 数据手册

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PD -2.339  
HFA25TB60  
Ultrafast, Soft Recovery Diode  
HEXFREDTM  
Features  
VR = 600V  
VF(typ.)* = 1.3V  
IF(AV) = 25A  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
• Very Low Qrr  
• Guaranteed Avalanche  
• Specified at Operating Conditions  
Qrr (typ.)= 112nC  
IRRM = 10A  
Benefits  
trr(typ.) = 23ns  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
di(rec)M/dt (typ.) = 250A/µs  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
Description  
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery  
diode. Employing the latest in epitaxial construction and advanced processing  
techniques it features a superb combination of characteristics which result in  
performance which is unsurpassed by any rectifier previously available. With  
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is  
especially well suited for use as the companion diode for IGBTs and MOSFETs.  
In addition to ultra fast recovery time, the HEXFRED product line features  
TO-220AC  
extremely low values of peak recovery current (IRRM) and does not exhibit any  
tendency to "snap-off" during thetb portion of recovery. The HEXFRED features  
combine to offer designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching transistor. These HEXFRED  
advantages can help to significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in  
power supplies and power conversion systems (such as inverters), motor  
drives, and many other similar applications where high speed, high efficiency  
is needed.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
600  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
Continuous Forward Current  
Continuous Forward Current  
25  
225  
100  
2.0  
125  
50  
A
Single Pulse Forward Current  
Maximum Repetitive Forward Current  
Maximum Repetitive Avalanche Current  
Maximum Power Dissipation  
IFRM  
IAR  
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
W
C
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
* 125°C  
4/2/97  

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