HFA25TB60STRLPBF

更新时间： 2024-11-28 12:57:59

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管软恢复二极管
页数	文件大小	规格书
6页	263K
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HFA25TB60STRLPBF 数据手册

PD -2.339

HFA25TB60

Ultrafast, Soft Recovery Diode

HEXFRED^TM

Features

V_R= 600V

V_F(typ.)* = 1.3V

I_F(AV)= 25A

Ultrafast Recovery

Ultrasoft Recovery

Very Low I_RRM

Very Low Q_rr

Guaranteed Avalanche

Specified at Operating Conditions

Q_rr(typ.)= 112nC

I_RRM= 10A

Benefits

t_rr(typ.) = 23ns

Reduced RFI and EMI

Reduced Power Loss in Diode and Switching

Transistor

di_(rec)M/dt (typ.) = 250A/µs

Higher Frequency Operation

Reduced Snubbing

Reduced Parts Count

Description

International Rectifier's HFA25TB60 is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is

especially well suited for use as the companion diode for IGBTs and MOSFETs.

In addition to ultra fast recovery time, the HEXFRED product line features

TO-220AC

extremely low values of peak recovery current (I_RRM) and does not exhibit any

tendency to "snap-off" during thet_bportion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching transistor. These HEXFRED

advantages can help to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in

power supplies and power conversion systems (such as inverters), motor

drives, and many other similar applications where high speed, high efficiency

is needed.

Absolute Maximum Ratings

Parameter

Max.

Units

V_R

Cathode-to-Anode Voltage

600

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FSM

Continuous Forward Current

225

100

2.0

125

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Repetitive Avalanche Current

Maximum Power Dissipation

I_FRM

I_AR

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

* 125°C

4/2/97

12 3 4 5 6

中文翻译

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与HFA25TB60STRLPBF相关器件

型号	品牌	获取价格	描述	数据表
HFA25TB60STRR	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, D2PAK-3
HFA25TB60STRR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3
HFA25TB60STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
HFA280NJ60C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA280NJ60C	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 222A, 600V V(RRM), Silicon, TO-244AB, TO-244AB, 2 PIN
HFA280NJ60CPBF	VISHAY	获取价格	HEXFRED® Ultrafast Soft Recovery Diode, 280 A
HFA280NJ60D	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA280NJ6C	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 280A, Silicon, TO-244AB,
HFA280NJ6CPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 280A, Silicon, TO-244AB,
HFA2-AS	HF	获取价格	继电器插座组件

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