Datasheet > HFA25TB60PBF_11

HFA25TB60PBF_11

更新时间： 2024-11-28 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	202K
描述
HEXFRED Ultrafast Soft Recovery Diode, 25 A

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HFA25TB60PBF_11 数据手册

VS-HFA25TB60PbF

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 25 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

Base

cathode

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA25TB60PbF is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 600 V and 25 A continuous current, the

VS-HFA25TB60PbF is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the

t_bportion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA25TB60PbF is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

Cathode Anode

TO-220AC

PRODUCT SUMMARY

Package

TO-220AC

25 A

I_F(AV)

V_R

600 V

V_Fat I_F

1.7 V

t_rr(typ.)

T_Jmax.

Diode variation

23 ns

150 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

225

I_FSM

I_FRM

Maximum repetitive forward current

100

T_C= 25 °C

125

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

Document Number: 94065

Revision: 24-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与HFA25TB60PBF_11相关器件

型号	品牌	获取价格	描述	数据表
HFA25TB60S	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 25 A
HFA25TB60S	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA25TB60SPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 25 A
HFA25TB60STRL	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3
HFA25TB60STRLPBF	INFINEON	获取价格	暂无描述
HFA25TB60STRR	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, D2PAK-3
HFA25TB60STRR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3
HFA25TB60STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
HFA280NJ60C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA280NJ60C	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 222A, 600V V(RRM), Silicon, TO-244AB, TO-244AB, 2 PIN

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