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HFA25PB60

更新时间： 2024-11-29 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 639K
描述
Ultrafast Soft Recovery Diode, 25 A

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中文翻译

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HFA25PB60 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-247AC包装说明：R-PSFM-T2
针数：3Reach Compliance Code：unknown
HTS代码：8541.10.00.80风险等级：5.33
其他特性：LOW NOISE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T2JESD-609代码：e0
最大非重复峰值正向电流：225 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：25 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.075 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HFA25PB60 数据手册

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HFA25PB60PbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 25 A  
FEATURES  
• Ultrafast recovery  
Pb-free  
• Ultrasoft recovery  
• Very low IRRM  
Available  
RoHS*  
• Very low Qrr  
• Specified at operating conditions  
• Lead (Pb)-free  
COMPLIANT  
• Designed and qualified for industrial level  
Cathode  
to base  
BENEFITS  
• Reduced RFI and EMI  
4
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
2
• Reduced parts count  
3
1
Anode  
2
Cathode  
DESCRIPTION  
HFA25PB60 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 25 A continuous current, the  
HFA25PB60 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited  
for applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
TO-247AC modified  
PRODUCT SUMMARY  
VR  
VF at 25 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
25 A  
trr (typical)  
23 ns  
TJ (maximum)  
150 °C  
112 nC  
250 A/µs  
10 A  
Qrr (typical)  
dI(rec)M/dt (typical)  
IRRM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
25  
225  
IFSM  
IFRM  
A
Maximum repetitive forward current  
100  
TC = 25 °C  
151  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
60  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94064  
Revision: 25-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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中文翻译

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HFA25PB60 替代型号

型号 品牌 替代类型 描述 数据表
VS-HFA25PB60PBF VISHAY

类似代替

 DIODE 25 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, R

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