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HD1A3M-AZ PDF预览

HD1A3M-AZ

更新时间: 2024-11-08 14:50:47
品牌 Logo 应用领域
瑞萨 - RENESAS 开关晶体管
页数 文件大小 规格书
8页 514K
描述
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD1A3M-AZ 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:POMM包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.31
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):200JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

HD1A3M-AZ 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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