HD1F2Q-AZ

更新时间： 2024-01-01 13:00:49

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
6页	113K
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HD1F2Q-AZ 数据手册

DATA SHEET

COMPOUND TRANSISTOR

HD1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

PACKAGE DRAWING (UNIT: mm)

FEATURES

•

High current drives such as IC outputs and actuators available

On-chip bias resistor

Low power consumption during drive

HD1 SERIES LISTS

Products

HD1A3M

HD1F3P

HD1L3N

HD1A4M

HD1L2Q

HD1F2Q

HD1A4A

Marking

R¹(KΩ)

1.0

R²(KΩ)

1.0

2.2

4.7

0.47

0.22

−

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T**

T^j

Ratings

Unit

1.0

2.0

0.02

2.0

Total power dissipation

Junction temperature

Storage temperature

°C

150

T^stg

−55 to +150

* PW ≤ 10 ms, duty cycle ≤ 50 %

** When 0.7 mm × 16 cm²ceramic board is used

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16182EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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