是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | POMM | 包装说明: | , |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.78 | 最大集电极电流 (IC): | 1 A |
最小直流电流增益 (hFE): | 200 | 元件数量: | 1 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HD1F3P-T2-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1F3P-T2-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1L2Q | NEC |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1L2Q | RENESAS |
获取价格 |
1A, 60V, NPN, Si, POWER TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN | |
HD1L2Q-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1L2Q-AZ | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
HD1L2Q-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
HD1L2Q-T1-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1L2Q-T1-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1L2Q-T2 | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 |