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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| HD1L3N-T1-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 |
|
| HD1L3N-T1-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
|
| HD1L3N-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
|
| HD1L3N-T2-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 |
|
| HD1L3N-T2-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
|
| HD1P040-CSH2-10000 | JAE |
获取价格 |
Card Edge Connector |
|
| HD1P040MA1 | ETC |
获取价格 |
Board-to-Cable Connector for High-speed Transmission HD Series Connector |
|
| HD1P040MA1R6000 | JAE |
获取价格 |
Card Edge Connector |
|
| HD1S | YANGJIE |
获取价格 |
MBS |
|
| HD1S040HA1 | ETC |
获取价格 |
Board-to-Cable Connector for High-speed Transmission HD Series Connector |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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