生命周期: | Not Recommended | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.31 | Is Samacsys: | N |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 2.1277 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HD1L3N-AY | RENESAS |
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PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1L3N-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1L3N-T1 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
HD1L3N-T1-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1L3N-T1-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1L3N-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
HD1L3N-T2-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1L3N-T2-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1P040-CSH2-10000 | JAE |
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Card Edge Connector | |
HD1P040MA1 | ETC |
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Board-to-Cable Connector for High-speed Transmission HD Series Connector |