Datasheet > HD1L3N

HD1L3N

更新时间： 2024-02-12 13:04:52

品牌	Logo	应用领域
瑞萨 - RENESAS		开关晶体管
页数	文件大小	规格书
8页	514K
描述
1A, 60V, NPN, Si, POWER TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN

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HD1L3N 技术参数

生命周期：	Not Recommended	零件包装代码：	SC-62
包装说明：	SMALL OUTLINE, R-PSSO-F3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.31	Is Samacsys：	N
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 2.1277	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	60 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	200
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子形式：	FLAT	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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型号	品牌	描述	获取价格	数据表
HD1L3N-AY	RENESAS	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89	获取价格
HD1L3N-AZ	RENESAS	on-chip resistor NPN silicon epitaxial transistor For mid-speed switching	获取价格
HD1L3N-T1	NEC	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL	获取价格
HD1L3N-T1-AY	RENESAS	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89	获取价格
HD1L3N-T1-AZ	RENESAS	on-chip resistor NPN silicon epitaxial transistor For mid-speed switching	获取价格
HD1L3N-T2	NEC	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL	获取价格