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HD1L2Q-AZ PDF预览

HD1L2Q-AZ

更新时间: 2024-09-20 19:39:35
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 112K
描述
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

HD1L2Q-AZ 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
HD1 SERIES  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
PACKAGE DRAWING (UNIT: mm)  
FEATURES  
High current drives such as IC outputs and actuators available  
On-chip bias resistor  
Low power consumption during drive  
HD1 SERIES LISTS  
Products  
HD1A3M  
HD1F3P  
HD1L3N  
HD1A4M  
HD1L2Q  
HD1F2Q  
HD1A4A  
Marking  
LP  
R1 (K)  
1.0  
R2 (K)  
1.0  
10  
LQ  
2.2  
LR  
4.7  
10  
LS  
10  
10  
LT  
0.47  
0.22  
4.7  
2.2  
10  
LU  
LX  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT **  
Tj  
Ratings  
Unit  
V
80  
60  
V
10  
V
1.0  
A
2.0  
A
0.02  
2.0  
A
Total power dissipation  
Junction temperature  
Storage temperature  
W
°C  
°C  
150  
Tstg  
55 to +150  
* PW 10 ms, duty cycle 50 %  
** When 0.7 mm × 16 cm2 ceramic board is used  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16182EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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