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HD1F2Q PDF预览

HD1F2Q

更新时间: 2024-11-07 21:55:07
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管功率双极晶体管
页数 文件大小 规格书
6页 113K
描述
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD1F2Q 技术参数

生命周期:Obsolete包装说明:POWER, PLASTIC, SC-62, 3 PIN
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):200JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:2 W
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HD1F2Q 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
HD1 SERIES  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
PACKAGE DRAWING (UNIT: mm)  
FEATURES  
High current drives such as IC outputs and actuators available  
On-chip bias resistor  
Low power consumption during drive  
HD1 SERIES LISTS  
Products  
HD1A3M  
HD1F3P  
HD1L3N  
HD1A4M  
HD1L2Q  
HD1F2Q  
HD1A4A  
Marking  
LP  
R1 (K)  
1.0  
R2 (K)  
1.0  
10  
LQ  
2.2  
LR  
4.7  
10  
LS  
10  
10  
LT  
0.47  
0.22  
4.7  
2.2  
10  
LU  
LX  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT **  
Tj  
Ratings  
Unit  
V
80  
60  
V
10  
V
1.0  
A
2.0  
A
0.02  
2.0  
A
Total power dissipation  
Junction temperature  
Storage temperature  
W
°C  
°C  
150  
Tstg  
55 to +150  
* PW 10 ms, duty cycle 50 %  
** When 0.7 mm × 16 cm2 ceramic board is used  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16182EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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