是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最大集电极电流 (IC): | 1 A | 最小直流电流增益 (hFE): | 80 |
元件数量: | 1 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HD1F2Q-AZ | NEC |
获取价格 |
暂无描述 | |
HD1F2Q-AZ | RENESAS |
获取价格 |
1A, 60V, NPN, Si, POWER TRANSISTOR | |
HD1F2Q-T1-AZ | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1F2Q-T2-AZ | RENESAS |
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PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1F3P | NEC |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD1F3P | RENESAS |
获取价格 |
1A, 60V, NPN, Si, POWER TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN | |
HD1F3P-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD1F3P-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
HD1F3P-AZ | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
HD1F3P-T1 | NEC |
获取价格 |
1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN |