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HAF2017-90STL

更新时间： 2024-02-25 17:50:21

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	134K
描述
Silicon N Channel Power MOSFET Power Switching

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中文翻译

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数据手册

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HAF2017-90STL 数据手册

HAF2017(L), HAF2017(S)

Silicon N Channel Power MOS FET

Power Switching

REJ03G0234-0200Z

(Previous ADE-208-1637 (Z))

Rev.2.00

Apr.13.2004

Descriptions

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in

over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built-in the over temperature shutdown circuit

Latch type shutdown operation (Need 0 voltage recovery)

Outline

LDPAK(L)

LDPAK(S)-1

Gate Resistor

Tempe-

rature

Sensing

Circuit

Latch

Circuit

Gate

Shut-

down

Circuit

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00, Apr.13.2004, page 1 of 8

12 3 4 5 6 7...9

中文翻译

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