Datasheet > HAF2026RJ_10

HAF2026RJ_10

更新时间： 2024-01-26 08:31:52

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	107K
描述
Silicon N Channel Power MOS FET Power Switching

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数据手册

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HAF2026RJ_10 数据手册

Preliminary Datasheet

HAF2026RJ

Silicon N Channel Power MOS FET

Power Switching

R07DS0122EJ0300

(Previous: REJ03G1255-0200)

Rev.3.00

Sep 01, 2010

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features



Logic level operation (5 to 6 V Gate drive)

Built-in the over temperature shut-down circuit

High endurance capability against to the shut-down circuit

Latch type shut down operation (need 0 voltage recovery)

Built-in the current limitation circuit

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 (FP-8DAV))

Current

Limitation

Circuit

Current

Limitation

Circuit

Gate Resistor

1, 3

2, 4

Source

Gate

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Temperature

Sensing

Circuit

Latch

Circuit

Gate

5, 6, 7, 8 Drain

Shut-down

Circuit

Shut-down

Circuit

MOS1

MOS2

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

–2.5

0.6

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Cannel dissipation

I_DR

0.6

1.54

1.5

Note3

I_AP

E_AR

Note3

C

Pch^Note1

Pch^Note2

Tch

Cannel temperature

Storage temperature

150

–55 to +150

Tstg

Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

3. Tc = 25C, Rg  50 

R07DS0122EJ0300 Rev.3.00

Sep 01, 2010

Page 1 of 7

12 3 4 5 6 7 8

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