Datasheet > HAF2027

HAF2027

更新时间： 2024-02-13 18:10:25

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	116K
描述
Silicon N Channel Power MOSFET Power Switching

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数据手册

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HAF2027 数据手册

HAF2027(L), HAF2027(S)

Silicon N Channel Power MOS FET

Power Switching

REJ03G1674-0100

Rev.1.00

May 19, 2008

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

•

Logic level operation (4 V Gate drive)

Built-in the over temperature shut-down circuit

High endurance capability against to the shut-down circuit

Latch type shut down operation (need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0004AE-A

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

(Package name: LDPAK (L) )

1. Gate

2. Drain

(Flange)

3. Source

HAF2027(L)

HAF2027(S)

Gate Resistor

Temperature

Sensing

Circuit

Gate

Shut-down

Circuit

Latch

Circuit

REJ03G1674-0100 Rev.1.00 May 19, 2008

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